IndiumV3, Russie, Analysis, bibRecord, 000095

Semiconductor Nanostructures Modified by the UV Laser Radiation

Identifieur interne : 000095 ( Russie/Analysis ); précédent : 000094; suivant : 000096

Semiconductor Nanostructures Modified by the UV Laser Radiation

Auteurs : RBID : Pascal:10-0360198

Descripteurs français

Pascal (Inist)
- Irradiation laser, Effet physique rayonnement, Laser excimère, Laser gaz, Laser UV, Domaine temps ns, Propriété optique, Nanostructure, Puits quantique, Semiconducteur III-V, Composé ternaire, Gallium Arséniure, Indium Arséniure, Porteur charge, GaAs, As Ga, As Ga In, Laser XeCl, 4270N, 7867D, InGaAs.

English descriptors

KwdEn :
- Charge carriers, Excimer lasers, Gallium Arsenides, Gas lasers, III-V semiconductors, Indium Arsenides, Laser irradiation, Nanostructures, Optical properties, Physical radiation effects, Quantum wells, Ternary compounds, Ultraviolet laser, ns range.

Abstract

The shortening of the absorption recovery time by a factor of more than 50 is observed for the semiconductor nanostructure consisting of ten GaAs/In_xGa_1-xAs/GaAs quantum wells irradiated with the nanosecond pulses of the XeCl laser. A possible reason for such a significant variation in the optical properties lies in the generation of point defects, which are responsible for recombination of charge carriers. The result can be employed in the UV photomodification of optical properties of semiconductor nanostructures.

Links toward previous steps (curation, corpus...)

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Pascal:10-0360198

Le document en format XML

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<seriesStmt><idno type="ISSN">1054-660X</idno>
<title level="j" type="abbreviated">Laser phys.</title>
<title level="j" type="main">Laser physics</title>
</seriesStmt>
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<profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Charge carriers</term>
<term>Excimer lasers</term>
<term>Gallium Arsenides</term>
<term>Gas lasers</term>
<term>III-V semiconductors</term>
<term>Indium Arsenides</term>
<term>Laser irradiation</term>
<term>Nanostructures</term>
<term>Optical properties</term>
<term>Physical radiation effects</term>
<term>Quantum wells</term>
<term>Ternary compounds</term>
<term>Ultraviolet laser</term>
<term>ns range</term>
</keywords>
<keywords scheme="Pascal" xml:lang="fr"><term>Irradiation laser</term>
<term>Effet physique rayonnement</term>
<term>Laser excimère</term>
<term>Laser gaz</term>
<term>Laser UV</term>
<term>Domaine temps ns</term>
<term>Propriété optique</term>
<term>Nanostructure</term>
<term>Puits quantique</term>
<term>Semiconducteur III-V</term>
<term>Composé ternaire</term>
<term>Gallium Arséniure</term>
<term>Indium Arséniure</term>
<term>Porteur charge</term>
<term>GaAs</term>
<term>As Ga</term>
<term>As Ga In</term>
<term>Laser XeCl</term>
<term>4270N</term>
<term>7867D</term>
<term>InGaAs</term>
</keywords>
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</teiHeader>
<front><div type="abstract" xml:lang="en">The shortening of the absorption recovery time by a factor of more than 50 is observed for the semiconductor nanostructure consisting of ten GaAs/In<sub>x</sub>
Ga<sub>1-x</sub>
As/GaAs quantum wells irradiated with the nanosecond pulses of the XeCl laser. A possible reason for such a significant variation in the optical properties lies in the generation of point defects, which are responsible for recombination of charge carriers. The result can be employed in the UV photomodification of optical properties of semiconductor nanostructures.</div>
</front>
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<fA08 i1="01" i2="1" l="ENG"><s1>Semiconductor Nanostructures Modified by the UV Laser Radiation</s1>
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<fA09 i1="01" i2="1" l="ENG"><s1>The Proceedings of the Eighteenth International Laser Workshop (LPHYS'09), Barcelona, Spain, July 13-17, 2009</s1>
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<fA11 i1="01" i2="1"><s1>RUBTSOVA (N. N.)</s1>
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<fA11 i1="03" i2="1"><s1>KISEL (V. E.)</s1>
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<fA11 i1="04" i2="1"><s1>KOCHUBEI (S. A.)</s1>
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</fA11>
<fA11 i1="10" i2="1"><s1>SHAMIRZAEV (T. S.)</s1>
</fA11>
<fA14 i1="01"><s1>Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences, pr. Akademika Lavrent'eva 13</s1>
<s2>Novosibirsk, 630090</s2>
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<sZ>1 aut.</sZ>
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<s2>Minsk, 220013</s2>
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<fC01 i1="01" l="ENG"><s0>The shortening of the absorption recovery time by a factor of more than 50 is observed for the semiconductor nanostructure consisting of ten GaAs/In<sub>x</sub>
Ga<sub>1-x</sub>
As/GaAs quantum wells irradiated with the nanosecond pulses of the XeCl laser. A possible reason for such a significant variation in the optical properties lies in the generation of point defects, which are responsible for recombination of charge carriers. The result can be employed in the UV photomodification of optical properties of semiconductor nanostructures.</s0>
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<fC02 i1="01" i2="3"><s0>001B40B70N</s0>
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<fC02 i1="02" i2="3"><s0>001B70H67D</s0>
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<s5>03</s5>
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<s5>03</s5>
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<s5>04</s5>
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<s5>09</s5>
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<s5>09</s5>
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<s5>10</s5>
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<s5>10</s5>
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<s5>11</s5>
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<fC03 i1="05" i2="X" l="ENG"><s0>Ultraviolet laser</s0>
<s5>11</s5>
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<fC03 i1="05" i2="X" l="SPA"><s0>Laser UV</s0>
<s5>11</s5>
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<s5>41</s5>
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<s5>41</s5>
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<s5>42</s5>
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<s5>47</s5>
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<s5>48</s5>
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<s5>48</s5>
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<s5>50</s5>
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<s5>50</s5>
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<fC03 i1="11" i2="3" l="FRE"><s0>Composé ternaire</s0>
<s5>51</s5>
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<fC03 i1="11" i2="3" l="ENG"><s0>Ternary compounds</s0>
<s5>51</s5>
</fC03>
<fC03 i1="12" i2="3" l="FRE"><s0>Gallium Arséniure</s0>
<s2>NC</s2>
<s2>NA</s2>
<s5>52</s5>
</fC03>
<fC03 i1="12" i2="3" l="ENG"><s0>Gallium Arsenides</s0>
<s2>NC</s2>
<s2>NA</s2>
<s5>52</s5>
</fC03>
<fC03 i1="13" i2="3" l="FRE"><s0>Indium Arséniure</s0>
<s2>NC</s2>
<s2>NA</s2>
<s5>53</s5>
</fC03>
<fC03 i1="13" i2="3" l="ENG"><s0>Indium Arsenides</s0>
<s2>NC</s2>
<s2>NA</s2>
<s5>53</s5>
</fC03>
<fC03 i1="14" i2="3" l="FRE"><s0>Porteur charge</s0>
<s5>61</s5>
</fC03>
<fC03 i1="14" i2="3" l="ENG"><s0>Charge carriers</s0>
<s5>61</s5>
</fC03>
<fC03 i1="15" i2="3" l="FRE"><s0>GaAs</s0>
<s4>INC</s4>
<s5>71</s5>
</fC03>
<fC03 i1="16" i2="3" l="FRE"><s0>As Ga</s0>
<s4>INC</s4>
<s5>75</s5>
</fC03>
<fC03 i1="17" i2="3" l="FRE"><s0>As Ga In</s0>
<s4>INC</s4>
<s5>76</s5>
</fC03>
<fC03 i1="18" i2="3" l="FRE"><s0>Laser XeCl</s0>
<s4>INC</s4>
<s5>83</s5>
</fC03>
<fC03 i1="19" i2="3" l="FRE"><s0>4270N</s0>
<s4>INC</s4>
<s5>84</s5>
</fC03>
<fC03 i1="20" i2="3" l="FRE"><s0>7867D</s0>
<s4>INC</s4>
<s5>85</s5>
</fC03>
<fC03 i1="21" i2="3" l="FRE"><s0>InGaAs</s0>
<s4>INC</s4>
<s5>86</s5>
</fC03>
<fN21><s1>228</s1>
</fN21>
</pA>
<pR><fA30 i1="01" i2="1" l="ENG"><s1>International Laser Physics Workshop (LPHYS'09)</s1>
<s2>18</s2>
<s3>Barcelona ESP</s3>
<s4>2009-07-13</s4>
</fA30>
</pR>
</standard>
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Semiconductor Nanostructures Modified by the UV Laser Radiation

Semiconductor Nanostructures Modified by the UV Laser Radiation

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Abstract

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